? 200 4 fa i r c h i l d s em i con d uctor c orp o r at i on h g t g 30 n 60 a 4d r e v. b 1 hgtG30N60A4D 600v, smps series n-channel igbt with anti-parallel hyperfast diode the hgtG30N60A4D is a mos gated high voltage switching devices combining the best features of mosfets and bipolar transistors. this device has the high input impedance of a mosfet and the low on-state conduction loss of a bipolar transistor. the much lower on-state voltage drop varies only moderately between 25 o c and 150 o c. the igbt used is the development type ta49343. the diode used in anti-parallel is the development type ta49373. this igbt is ideal for many high voltage switching applications operating at high frequencies where low conduction losses are essential. this device has been optimized for high frequency switch mode power supplies. formerly developmental type ta49345. symbol features ? >100khz operation at 390v, 30a 200khz operation at 390v, 18a 600v switching soa capability typical fall time. . . . . . . . . . . . . . . . . 60ns at t j = 125 o c low conduction loss temperature compensating saber? model www.fairchildsemi.com packaging jedec style to-247 ordering information part number package brand hgtG30N60A4D to-247 30n60a4d note: when ordering, use the entire part number. c e g collector (flange) c e g fairchild corporation igbt product is covered by one or more of the following u.s. patents 4,364,073 4,417,385 4,430,792 4,443,931 4,466,176 4,516,143 4,532,534 4,587,713 4,598,461 4,605,948 4,620,211 4,631,564 4,639,754 4,639,762 4,641,162 4,644,637 4,682,195 4,684,413 4,694,313 4,717,679 4,743,952 4,783,690 4,794,432 4,801,986 4,803,533 4,809,045 4,809,047 4,810,665 4,823,176 4,837,606 4,860,080 4,883,767 4,888,627 4,890,143 4,901,127 4,904,609 4,933,740 4,963,951 4,969,027 d a t a s h eet s epte mber 2004 free datasheet http://www.datasheetlist.com/
? 200 4 fa i r c h i l d s em i con d uctor c orp o r at i on h g t g 30 n 60 a 4d r e v. b 1 absolute maximum ratings t c = 25 o c, unless otherwise specified hgtG30N60A4D, units collector to emitter voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .bv ces 600 v collector current continuous at t c = 25 o c . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . i c25 75 a at t c = 110 o c . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . i c110 60 a collector current pulsed (note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . i cm 240 a gate to emitter voltage continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . v ges 20 v gate to emitter voltage pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .v gem 30 v switching safe operating area at t j = 150 o c (figure 2) . . . . . . . . . . . . . . . . . . . . . . . ssoa 150a at 600v power dissipation total at t c = 25 o c . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . p d 463 w power dissipation derating t c > 25 o c . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.7 w/ o c operating and storage junction temperature range . . . . . . . . . . . . . . . . . . . . . . . . t j , t stg -55 to 150 o c maximum temperature for soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . t l 260 o c caution: stresses above those listed in ?absolute maximum ratings? may cause permanent damage to the device. this is a stress o nly rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. note: 1. pulse width limited by maximum junction temperature. electrical specifications t j = 25 o c, unless otherwise specified parameter symbol test conditions min typ max units collector to emitter breakdown voltage bv ces i c = 250 a, v ge = 0v 600 - - v collector to emitter leakage current i ces v ce = 600v t j = 25 o c - - 250 a t j = 125 o c--2.8ma collector to emitter saturation voltage v ce(sat) i c = 30a, v ge = 15v t j = 25 o c-1.82.6v t j = 125 o c-1.62.0v gate to emitter threshold voltage v ge(th) i c = 250 a, v ce = v ge 4.5 5 .2 7.0 v gate to emitter leakage current i ges v ge = 20v - - 250 na switching soa ssoa t j = 150 o c, r g = 3 ? , v ge = 15v, l = 100 h, v ce = 600v 150 - - a gate to emitter plateau voltage v gep i c = 30a, v ce = 300v - 8.5 - v on-state gate charge q g(on) i c = 30a, v ce = 300v v ge = 15v - 225 270 nc v ge = 20v - 300 360 nc current turn-on delay time t d(on)i igbt and diode at t j = 25 o c, i ce = 30a, v ce = 390v, v ge = 15v, r g = 3 ?, l = 200 h, test circuit (figure 24) -25 - ns current rise time t ri -12 - ns current turn-off delay time t d(off)i - 150 - n s current fall time t fi -38 - ns turn-on energy (note 2) e on1 - 280 - j turn-on energy (note 2) e on2 - 600 - j turn-off energy (note 3) e off - 240 350 j current turn-on delay time t d(on)i igbt and diode at t j = 125 o c, i ce = 30a, v ce = 390v, v ge = 15v, r g = 3 ?, l = 200 h, test circuit (figure 24) -24 - ns current rise time t ri -11 - ns current turn-off delay time t d(off)i - 180 200 ns current fall time t fi -5870ns turn-on energy (note 2) e on1 - 280 - j turn-on energy (note 2) e on2 - 1000 1200 j turn-off energy (note 3) e off - 450 750 j diode forward voltage v ec i ec = 30a - 2.2 2.5 v diode reverse recovery time t rr i ec = 30a, di ec /dt = 200a/ s - 40 55 ns i ec = 1a, di ec /dt = 200a/ s - 30 42 ns hgtG30N60A4D free datasheet http://www.datasheetlist.com/
? 200 4 fa i r c h i l d s em i con d uctor c orp o r at i on h g t g 30 n 60 a 4d r e v. b 1 thermal resistance junction to case r jc igbt - - 0.27 o c/w diode - - 0.65 o c/w notes: 2. values for two turn-on loss conditions are shown for the convenience of the circuit designer. e on1 is the turn-on loss of the igbt only. e on2 is the turn-on loss when a typical diode is used in the test circuit and the diode is at the same t j as the igbt. the diode type is specified in figure 24. 3. turn-off energy loss (e off ) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending at the point where the collector current equals zero (i ce = 0a). all devices were tested per jedec standard no. 24-1 method for measurement of power device turn-off switching loss. this test method produces the true total turn-off energy loss. typical performance curves unless otherwise specified figure 1. dc collector current vs case temperature figure 2. minimum switching safe operating area figure 3. operating frequency vs collector to emitter current figure 4. short circuit withstand time electrical specifications t j = 25 o c, unless otherwise specified (continued) parameter symbol test conditions min typ max units t c , case temperature ( o c) i ce , dc collector current (a) 50 10 0 40 20 30 25 75 100 125 150 60 60 v ge = 15v 70 50 v ce , collector to emitter voltage (v) 700 0 i ce , collector to emitter current (a) 300 400200100 500 600 0 100 150 50 200 t j = 150 o c, r g = 3 ? , v ge = 15v, l = 500 h t c v ge 15v 75 o c f max , operating frequency (khz) 3 i ce , collector to emitter current (a) 30 300 6010 30 500 f max1 = 0.05 / (t d(off)i + t d(on)i ) r ?jc = 0.27 o c/w, see notes p c = conduction dissipation (duty factor = 50%) f max2 = (p d - p c ) / (e on2 + e off ) t j = 125 o c, r g = 3 ? , l = 200 h, v ce = 390v 100 v ge , gate to emitter voltage (v) i sc , peak short circuit current (a) t sc , short circuit withstand time ( s) 10 11 12 15 10 16 300 500 900 t sc i sc 800 13 14 4 6 8 12 14 18 200 400 600 700 v ce = 390v, r g = 3 ? , t j = 125 o c hgtG30N60A4D free datasheet http://www.datasheetlist.com/
? 200 4 fa i r c h i l d s em i con d uctor c orp o r at i on h g t g 30 n 60 a 4d r e v. b 1 figure 5. collector to emitter on-state voltage figure 6. collector to emitter on-state voltage figure 7. turn-on energy loss vs collector to emitter current figure 8. turn-off energy loss vs collector to emitter current figure 9. turn-on delay time vs collector to emitter current figure 10. turn-on rise time vs collector to emitter current typical performance curves unless otherwise specified (continued) 01.0 v ce , collector to emitter voltage (v) i ce , collector to emitter current (a) 0 10 20 1.5 2.0 2.5 40 30 t j = 150 o c pulse duration = 250 s duty cycle < 0.5%, v ge = 12v 50 t j = 25 o c 0.5 t j = 125 o c i ce , collector to emitter current (a) v ce , collector to emitter voltage (v) duty cycle < 0.5%, v ge = 15v pulse duration = 250 s t j = 150 o c t j = 25 o c t j = 125 o c 0 10 20 40 30 50 0 1.0 1.5 2.0 2.5 0.5 e on2 , turn-on energy loss ( j) 1000 i ce , collector to emitter current (a) 500 1500 0 3500 10 20 30 40 50 60 t j = 125 o c, v ge = 12v, v ge = 15v r g = 3 ? , l = 200 h, v ce = 390v t j = 25 o c, v ge = 12v, v ge = 15v 0 2500 2000 3000 1000 i ce , collector to emitter current (a) e off , turn-off energy loss ( j) 0 600 200 800 1200 1400 t j = 25 o c, v ge = 12v or 15v t j = 125 o c, v ge = 12v or 15v 400 r g = 3 ? , l = 200 h, v ce = 390v 10 20 30 40 50 60 0 i ce , collector to emitter current (a) t d(on)i , turn-on delay time (ns) 20 22 24 26 28 34 10 20 30 40 50 60 0 t j = 25 o c, t j = 125 o c, v ge = 15v t j = 25 o c, t j = 125 o c, v ge = 12v r g = 3 ? , l = 200 h, v ce = 390v 32 30 i ce , collector to emitter current (a) t ri , rise time (ns) 0 40 20 100 80 60 r g = 3 ? , l = 200 h, v ce = 390v t j = 125 o c, v ge = 15v, v ge = 12v 2010 30 40 50 60 0 t j = 25 o c, v ge = 12v t j = 25 o c, v ge = 15v hgtG30N60A4D free datasheet http://www.datasheetlist.com/
? 200 4 fa i r c h i l d s em i con d uctor c orp o r at i on h g t g 30 n 60 a 4d r e v. b 1 figure 11. turn-off delay time vs collector to emitter current figure 12. fall time vs collector to emitter current figure 13. transfer characteristic figure 14. gate charge waveforms figure 15. total switching loss vs case temperature figure 16. total switching loss vs gate resistance typical performance curves unless otherwise specified (continued) 160 120 140 i ce , collector to emitter current (a) t d(off)i , turn-off delay time (ns) 220 200 180 v ge = 12v, v ge = 15v, t j = 25 o c v ge = 12v, v ge = 15v, t j = 125 o c r g = 3 ? , l = 200 h, v ce = 390v 2010 30 40 50 60 0 i ce , collector to emitter current (a) t fi , fall time (ns) 20 30 40 r g = 3 ? , l = 200 h, v ce = 390v t j = 25 o c, v ge = 12v or 15v 50 70 2010 30 40 50 60 0 t j = 125 o c, v ge = 12v or 15v 60 i ce , collector to emitter current (a) 0 50 100 78910 12 v ge , gate to emitter voltage (v) 11 150 300 350 6 pulse duration = 250 s duty cycle < 0.5%, v ce = 10v t j = 125 o c t j = -55 o c 250 200 t j = 25 o c v ge , gate to emitter voltage (v) q g , gate charge (nc) 2.5 12.5 0 7.5 i g(ref) = 1ma, r l = 15 ? , t j = 25 o c v ce = 200v 5.0 10.0 15.0 v ce = 600v 50 100 150 200 250 0 v ce = 400v i ce = 15a 0 2 50 75 100 t c , case temperature ( o c) 3 125 25 150 5 e total , total switching energy loss (mj) r g = 3 ? , l = 200 h, v ce = 390v, v ge = 15v 4 i ce = 60a i ce = 30a 1 e total = e on2 + e off 0 10 100 r g , gate resistance ( ? ) 16 3 300 e total , total switching energy loss (mj) 20 t j = 125 o c, l = 200 h, v ce = 390v, v ge = 15v e total = e on2 + e off i ce = 15a i ce = 30a i ce = 60a 12 8 4 hgtG30N60A4D free datasheet http://www.datasheetlist.com/
? 200 4 fa i r c h i l d s em i con d uctor c orp o r at i on h g t g 30 n 60 a 4d r e v. b 1 figure 17. capacitance vs collector to emitter voltage figure 18. collector to emitter on-state voltage vs gate to emitter voltage figure 19. diode forward current vs forward voltage drop figure 20. recovery times vs forward current figure 21. recovery times vs rate of change of current figure 22. stored charge vs rate of change of current typical performance curves unless otherwise specified (continued) v ce , collector to emitter voltage (v) c, capacitance (nf) c res 0 5 10 15 20 25 0 2 6 8 10 4 frequency = 1mhz c oes c ies v ge , gate to emitter voltage (v) 9 1.7 12 1.8 2.0 1.9 11 13 14 15 16 2.1 2.3 v ce , collector to emitter voltage (v) i ce = 60a duty cycle < 0.5%, v ge = 15v pulse duration = 250 s, t j = 25 o c i ce = 30a i ce = 15a 2.2 10 0.5 1.0 1.5 2.5 i ec , forward current (a) v ec , forward voltage (v) 02.0 0 10 15 20 25 25 o c 125 o c 5 35 30 pulse duration = 250 s duty cycle < 0.5%, 60 40 20 0 t rr , recovery times (ns) i ec , forward current (a) 030 20 70 50 30 10 10 15 25 80 100 25 o c t rr 25 o c t a 25 o c t b 125 o c t b 125 o c t a di ec /dt = 200a/ s 125 o c t rr 5 90 300 400 500 700 800 t rr , recovery times (ns) di ec /dt, rate of change of current (a/ s) 200 600 10 0 20 30 40 50 60 900 1000 125 o c t a 125 o c t b 25 o c t a 25 o c t b i ec = 30a, v ce = 390v 1000 600 200 0 q rr , reverse recovery charge (nc) di ec /dt, rate of change of current (a/ s) 1000500 1200 800 400 200 300 400 900 1400 600 700 800 125 o c, i ec = 30a 125 o c, i ec = 15a 25 o c, i ec = 15a 25 o c, i ec = 30a v ce = 390v hgtG30N60A4D free datasheet http://www.datasheetlist.com/
? 200 4 fa i r c h i l d s em i con d uctor c orp o r at i on h g t g 30 n 60 a 4d r e v. b 1 figure 23. igbt normalized transient thermal response, junction to case typical performance curves unless otherwise specified (continued) t 1 , rectangular pulse duration (s) z jc , normalized thermal response 10 -2 10 -1 10 0 10 -5 10 -3 10 -2 10 -1 10 0 10 1 10 -4 0.10 t 1 t 2 p d duty factor, d = t 1 / t 2 peak t j = (p d x z jc x r jc ) + t c single pulse 0.50 0.20 0.05 0.02 0.01 test circuit and waveforms figure 24. inductive switching test circuit figure 25. switching test waveforms r g = 3 ? l = 200 h v dd = 390v + - dut hgtp30n60a4d diode ta49373 t fi t d(off)i t ri t d(on)i 10% 90% 10% 90% v ce i ce v ge e off e on2 hgtG30N60A4D free datasheet http://www.datasheetlist.com/
? 200 4 fa i r c h i l d s em i con d uctor c orp o r at i on h g t g 30 n 60 a 4d r e v. b 1 handling precautions for igbts insulated gate bipolar transistors are susceptible to gate- insulation damage by the electrostatic discharge of energy through the devices. when handling these devices, care should be exercised to assure that the static charge built in the handler ? s body capacitance is not discharged through the device. with proper handling and application procedures, however, igbts are currently being extensively used in production by numerous equipment manufacturers in military, industrial and consumer applications, with virtually no damage problems due to electrostatic discharge. igbts can be handled safely if the following basic precautions are taken: 1. prior to assembly into a circuit, all leads should be kept shorted together either by the use of metal shorting springs or by the insertion into conductive material such as ? eccosorbd ? ld26 ? or equivalent. 2. when devices are removed by hand from their carriers, the hand being used should be grounded by any suitable means - for example, with a metallic wristband. 3. tips of soldering irons should be grounded. 4. devices should never be inserted into or removed from circuits with power on. 5. gate voltage rating - never exceed the gate-voltage rating of v gem . exceeding the rated v ge can result in permanent damage to the oxide layer in the gate region. 6. gate termination - the gates of these devices are essentially capacitors. circuits that leave the gate open- circuited or floating should be avoided. these conditions can result in turn-on of the device due to voltage buildup on the input capacitor due to leakage currents or pickup. 7. gate protection - these devices do not have an internal monolithic zener diode from gate to emitter. if gate protection is required an external zener is recommended. operating frequency information operating frequency information for a typical device (figure 3) is presented as a guide for estimating device performance for a specific application. other typical frequency vs collector current (i ce ) plots are possible using the information shown for a typical unit in figures 5, 6, 7, 8, 9 and 11. the operating frequency plot (figure 3) of a typical device shows f max1 or f max2 ; whichever is smaller at each point. the information is based on measurements of a typical device and is bounded by the maximum rated junction temperature. f max1 is defined by f max1 = 0.05/(t d(off)i + t d(on)i ). deadtime (the denominator) has been arbitrarily held to 10% of the on-state time for a 50% duty factor. other definitions are possible. t d(off)i and t d(on)i are defined in figure 25. device turn-off delay can establish an additional frequency limiting condition for an application other than t jm . t d(off)i is important when controlling output ripple under a lightly loaded condition. f max2 is defined by f max2 = (p d - p c )/(e off + e on2 ). the allowable dissipation (p d ) is defined by p d =(t jm -t c )/r jc . the sum of device switching and conduction losses must not exceed p d . a 50% duty factor was used (figure 3) and the conduction losses (p c ) are approximated by p c =(v ce xi ce )/2. e on2 and e off are defined in the switching waveforms shown in figure 25. e on2 is the integral of the instantaneous power loss (i ce x v ce ) during turn-on and e off is the integral of the instantaneous power loss (i ce xv ce ) during turn-off. all tail losses are included in the calculation for e off ; i.e., the collector current equals zero (i ce = 0). hgtG30N60A4D free datasheet http://www.datasheetlist.com/
disclaimer fairchild semiconductor reserves the right to make changes without further notice to any products herein to improve reliability, function or design. fairchild does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. trademarks the following are registered and unregistered trademarks fairchild semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. life support policy fairchild?s products are not authorized for use as critical components in life support devices or systems without the express written approval of fairchild semiconductor corporation. as used herein: 1. life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. a critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. product status definitions definition of terms datasheet identification product status definition advance information preliminary no identification needed obsolete this datasheet contains the design specifications for product development. specifications may change in any manner without notice. this datasheet contains preliminary data, and supplementary data will be published at a later date. fairchild semiconductor reserves the right to make changes at any time without notice in order to improve design. this datasheet contains final specifications. fairchild semiconductor reserves the right to make changes at any time without notice in order to improve design. this datasheet contains specifications on a product that has been discontinued by fairchild semiconductor. the datasheet is printed for reference information only. formative or in design first production full production not in production isoplanar? littlefet? microcoupler? microfet? micropak? microwire? msx? msxpro? ocx? ocxpro? optologic ? optoplanar? pacman? pop? fast ? fastr? fps? frfet? globaloptoisolator? gto? hisec? i 2 c? i-lo ? implieddisconnect? rev. i11 acex? activearray? bottomless? coolfet? crossvolt ? dome? ecospark? e 2 cmos? ensigna? fact? fact quiet series? power247? powersaver? powertrench ? qfet ? qs? qt optoelectronics? quiet series? rapidconfigure? rapidconnect? serdes? silent switcher ? smart start? spm? stealth? superfet? supersot?-3 supersot?-6 supersot?-8 syncfet? tinylogic ? tinyopto? trutranslation? uhc? ultrafet ? vcx? across the board. around the world.? the power franchise ? programmable active droop? free datasheet http://www.datasheetlist.com/
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